Quality Control and Electrical Properties of Thin Amorphous (SiC)1-x(AlN)x Films Produced by Radio Frequency Dual Magnetron Sputtering

Abstract:

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Amorphous pseudobinary (SiC)1 x(AlN)x thin films have been produced by radio frequency dual magnetron sputtering from bulk SiC and AlN targets. For each target the emission characteristic, i.e. the spatial variation of the deposition rate was determined, in order to predict thickness distribution and spatial composition variation for the (SiC) (AlN) alloy. Impedance spectroscopy shows a high resistivity of the films in the SiC rich region, decreasing significantly towards the AlN rich region.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1199-1202

DOI:

10.4028/www.scientific.net/MSF.645-648.1199

Citation:

G. Gálvez de la Puente et al., "Quality Control and Electrical Properties of Thin Amorphous (SiC)1-x(AlN)x Films Produced by Radio Frequency Dual Magnetron Sputtering", Materials Science Forum, Vols. 645-648, pp. 1199-1202, 2010

Online since:

April 2010

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$35.00

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