2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Abstract:

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Channel mobility properties of SiC and GaN based MOSFETs and AlGaN/GaN HEMTs are compared in this paper. For a similar active area, the specific on-resistance of the MOSFET is much larger than the on-resistance for the HEMT, which is depending on the electron mobility in their respective channels. Physically-based models are used to fit this experimental transistor mobility.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

1207-1210

DOI:

10.4028/www.scientific.net/MSF.645-648.1207

Citation:

A. Pérez-Tomás et al., "2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility", Materials Science Forum, Vols. 645-648, pp. 1207-1210, 2010

Online since:

April 2010

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Price:

$35.00

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