Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices
A physical and electrical analysis of Si/SiC heterojunctions formed by layer transfer based on the smartcut® process is presented in this paper. AFM and SEM have revealed a high bonding quality when Si wafers are transferred to SiC on-axis wafers. XRD points to the fact that the layers are monocrystalline in nature. A surface AFM analysis of the bonded wafers demonstrated a smooth surface (rms = 5.8 nm) suitable for semiconductor device fabrication. Capacitors have been fabricated from the Si/SiC heterojunctions, which have been totally oxidised. Oxidised Si/SiC structures yielded a lower density of interface states than conventional thermal oxidation techniques.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
M. R. Jennings et al., "Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices", Materials Science Forum, Vols. 645-648, pp. 1243-1246, 2010