3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)

Abstract:

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3C-SiC devices are hampered by the defect density in heteroepitaxial films. Acting on the substrate, it is possible to achieve a better compliance between Si and 3C-SiC. We present here an approach to favorite defect geometrical reduction in both [ ] and [ ] directions by creating Inverted Silicon Pyramids (ISP). A study of 3C-SiC growth on ISP is reported showing benefits in the film quality and a reduction in the linear density of stacking faults. Growth on ISP leads also to a decrease in the 3C-SiC residual stress as well as in the bow of the Si/SiC system.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

135-138

DOI:

10.4028/www.scientific.net/MSF.645-648.135

Citation:

G. D'Arrigo et al., "3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)", Materials Science Forum, Vols. 645-648, pp. 135-138, 2010

Online since:

April 2010

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$35.00

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