3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
3C-SiC devices are hampered by the defect density in heteroepitaxial films. Acting on the substrate, it is possible to achieve a better compliance between Si and 3C-SiC. We present here an approach to favorite defect geometrical reduction in both [ ] and [ ] directions by creating Inverted Silicon Pyramids (ISP). A study of 3C-SiC growth on ISP is reported showing benefits in the film quality and a reduction in the linear density of stacking faults. Growth on ISP leads also to a decrease in the 3C-SiC residual stress as well as in the bow of the Si/SiC system.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
G. D'Arrigo et al., "3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)", Materials Science Forum, Vols. 645-648, pp. 135-138, 2010