Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates

Abstract:

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We investigate by means of Atomic Force Microscopy and Scanning Electron Microscopy the surface modifications of 3C-SiC(111)/Si epilayers induced by thermal annealing performed under hydrogen or argon atmosphere. We explore the effects of these treatments both on as grown and polished epilayers. Owing to an important initial surface roughness, the annealing has few impact on as grown films. On polished epilayers, a surface reorganization via the formation of a regular array of steps is evidenced. The proper effect of each gas on the surface reorganization is discussed.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

155-158

DOI:

10.4028/www.scientific.net/MSF.645-648.155

Citation:

M. Portail et al., "Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates", Materials Science Forum, Vols. 645-648, pp. 155-158, 2010

Online since:

April 2010

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Price:

$35.00

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