Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films

Abstract:

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Growth of 3C-SiC films on an off-axis (111) Si substrate, with a miscut of 4° towards the <110> direction, is here reported. An extensive material characterization has been conducted by means of Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD) and Raman spectroscopy, indicating a very promising film quality with extremely flat surface and interface. Notwithstanding the excellent film quality, the wafer bow is still limiting its full employment in device realization.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

167-170

DOI:

10.4028/www.scientific.net/MSF.645-648.167

Citation:

A. Severino et al., "Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films", Materials Science Forum, Vols. 645-648, pp. 167-170, 2010

Online since:

April 2010

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Price:

$35.00

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