Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
Growth of 3C-SiC films on an off-axis (111) Si substrate, with a miscut of 4° towards the <110> direction, is here reported. An extensive material characterization has been conducted by means of Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD) and Raman spectroscopy, indicating a very promising film quality with extremely flat surface and interface. Notwithstanding the excellent film quality, the wafer bow is still limiting its full employment in device realization.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
A. Severino et al., "Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films", Materials Science Forum, Vols. 645-648, pp. 167-170, 2010