Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates


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3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000°C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.



Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller




M. Beshkova et al., "Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates", Materials Science Forum, Vols. 645-648, pp. 183-186, 2010

Online since:

April 2010




[1] A.A. Lebedev, Semicond. Sci. Technol. Vol. 21 (2006), p. R17-R34.

[2] J.A. Cooper, M.R. Melloch, R. Singh, A. Agarwal, J.W. Palmour, IEEE Trans. Electron Devices, Vol. 49 (2002) pp.658-664.


[3] J. Stoemenos, C. Dezauzier, G. Arnaud, S. Contreras, J. Camassel, J. Pascual, J.L. Robert, Mater. Sci. Eng. B Vol. 29 (1995) pp.160-164.

[4] M. Beshkova, M. Syväjärvi, R. Vasiliauskas, J. Birch and R. Yakimova, Mater. Sci. Forum Vol. 615-617 (2009) pp.181-184.


[5] P.G. Neudeck, A.J. Trunek, D. J Spry, J.A. Powell, H. Du, M. Skowronski, X.R. Huang and M. Dudley, Chem. Vap. Deposition Vol. 12, (2006) pp.531-540.


[6] M. Soueidan, G. Ferro, B. Nsouli, F. Cauwet, J. Dazord, G. Younes, Y. Monteil, Mater. Sci. Eng. B Vol. 130 (2006) pp.66-72.

[7] A. Boulle, D. Chaussende, F. Conchon, G. Ferro, and O. Masson, Journal of Crystal Growth Vol. 310 (2008) pp.982-987 a) b).