Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

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The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and layer thicknesses in order to investigate the recombination processes controlling the carrier lifetime in low- Z1/2 material. The results indicate that in more recently grown layers with lower deep defect concentrations, surface recombination tends to dominate over carrier capture by other bulk defects. Low-injection lifetime measurements were also found to provide a convenient method to assess the surface band bending and surface trap density in samples with a significant surface recombination rate.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

203-206

Citation:

P. B. Klein et al., "Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers", Materials Science Forum, Vols. 645-648, pp. 203-206, 2010

Online since:

April 2010

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$38.00

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