Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and layer thicknesses in order to investigate the recombination processes controlling the carrier lifetime in low- Z1/2 material. The results indicate that in more recently grown layers with lower deep defect concentrations, surface recombination tends to dominate over carrier capture by other bulk defects. Low-injection lifetime measurements were also found to provide a convenient method to assess the surface band bending and surface trap density in samples with a significant surface recombination rate.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
P. B. Klein et al., "Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers", Materials Science Forum, Vols. 645-648, pp. 203-206, 2010