Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions

Abstract:

Article Preview

An alternative approach based on non-equilibrium free-carrier density measurements was used to characterize the fundamental absorption edge of 3C-SiC at room and 77 K temperatures. At 77 K temperature the extracted absorption edge compared well to the previous literature data revealing characteristic thresholds due to the phonon emission assisted transitions. At room temperature the absorption tail due to the phonon absorption assisted transition was revealed up to the value of 0.01 cm-1 exceeding the previous 5 cm-1 limit induced by unintentional sample doping.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

231-234

DOI:

10.4028/www.scientific.net/MSF.645-648.231

Citation:

V. Grivickas et al., "Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions", Materials Science Forum, Vols. 645-648, pp. 231-234, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.