Paper Title:
Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios
  Abstract

Raman microscopy has been used to study transport properties in hetero-epitaxial 3C-SiC/Si thin films. By an accurate analysis of the Longitudinal Optic phonon-plasmon coupled (LOPC) modes in n-type doped 3C-SiC films, free carrier density and mobility has been determined. A study of doped 3C-SiC reveals a strong relationship between the calculated free carrier density and both the C/Si ratio used during the epitaxial process and Silicon substrates orientation on which 3C-SiC thin films were grown (maintaining the N2 gas flow rate). The free carrier density obtained is in the range between 5x1016 cm-3 and 4x1018 cm-3. Epitaxial films grown on (111) Si substrates show a higher free carrier density and a lower dependence on C/Si ratios as compared to films grown on (100) Si substrates.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
255-258
DOI
10.4028/www.scientific.net/MSF.645-648.255
Citation
N. Piluso, A. Severino, M. Camarda, R. Anzalone, A. Canino, G. Condorelli, G. Abbondanza, F. La Via, "Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios", Materials Science Forum, Vols. 645-648, pp. 255-258, 2010
Online since
April 2010
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