Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x(AlN)x Films
Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x were grown by radio frequency dual magnetron sputtering on CaF2, MgO and glass substrates. We performed isochronical annealing steps up to 500°C. The optical bandgap is determined for each composition from spectroscopic transmission measurement in two different ways: according to Tauc and using the (αhν)2 plot. The dependence of the optical bandgap on the composition x can be described by Vegard’s empirical law for alloys.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
J. A. Guerra et al., "Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x(AlN)x Films", Materials Science Forum, Vols. 645-648, pp. 263-266, 2010