Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x(AlN)x Films

Abstract:

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Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x were grown by radio frequency dual magnetron sputtering on CaF2, MgO and glass substrates. We performed isochronical annealing steps up to 500°C. The optical bandgap is determined for each composition from spectroscopic transmission measurement in two different ways: according to Tauc and using the (αhν)2 plot. The dependence of the optical bandgap on the composition x can be described by Vegard’s empirical law for alloys.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

263-266

DOI:

10.4028/www.scientific.net/MSF.645-648.263

Citation:

J. A. Guerra et al., "Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x(AlN)x Films", Materials Science Forum, Vols. 645-648, pp. 263-266, 2010

Online since:

April 2010

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$35.00

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