Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy


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The structure of various inclusions in SiC epitaxial layers grown on 4o offcut substrates was investigated using three advanced techniques. Using micro-Raman spectroscopy, the observed inclusions exhibited a complex structure having either different SiC polytypes like 3C or 6H or they were misoriented 4H-SiC inclusions. The UVPL images showed dislocations and other extended defects around the inclusion-related defects, and strain fields were observed in the x-ray topographs near the defect sites. Spectral UVPL imaging shows features with varying luminescence inside the inclusion related defects which propagate and may cause deformation in the crystalline structure and lead to non-radiative recombination centers within the defect.



Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller




N. A. Mahadik et al., "Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy", Materials Science Forum, Vols. 645-648, pp. 315-318, 2010

Online since:

April 2010




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