Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers

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An extended structural defects which locally drastically reduces the carrier lifetime, has been observed in as-grown epilayers. A combination of back polishing, etching in molten KOH and optical microscopy revealed the geometrical structure of the stacking fault inside the epilayer. The fault started close to the epi-substrate interface, expanded initially rapidly but changed geometry after some time and reduced in size during further growth. The optical spectrum as well as the temperature dependence from this fault is identical to the emission from the single Shockley stacking faults previously only observed and formed in the bipolar diodes during forward voltage operation.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

327-330

DOI:

10.4028/www.scientific.net/MSF.645-648.327

Citation:

J. ul Hassan and P. Bergman, "Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers", Materials Science Forum, Vols. 645-648, pp. 327-330, 2010

Online since:

April 2010

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$35.00

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