Dislocation Activity in 4H-SiC in the Brittle Domain

Abstract:

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Results of deformation experiments on 4H-SiC single crystals below the usual brittle to ductile transition temperature are reported and discussed in comparison of previous literature data. Si-core and C-core partials are evidenced in the basal plane, and perfect dislocations are also observed on other crystallographic planes. These results could indicate that dislocation activity under high stress is more complex than expected.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

335-338

DOI:

10.4028/www.scientific.net/MSF.645-648.335

Citation:

J. L. Demenet et al., "Dislocation Activity in 4H-SiC in the Brittle Domain", Materials Science Forum, Vols. 645-648, pp. 335-338, 2010

Online since:

April 2010

Keywords:

TEM

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Price:

$35.00

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DOI: 10.1016/s1572-4859(09)01602-7

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