Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects

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A large leakage current (IR) is observed at reverse bias (VR) in 3C-SiC p+-n diodes. This leakage current is caused by a high density of stacking faults (SFs). The temperature dependence of IR is studied in the temperature range from 100 K to 295 K. It turns out that IR is thermally activated for reverse voltages VR  |170| V. We propose that within this voltage range IR originates from thermally assisted tunneling of electrons and holes from band-like states of the SFs into the conduction and valence band. For VR > |170| V, the thermal barrier is strongly reduced and direct tunneling dominates. These dependences are simulated in the framework of a simplified model.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

343-346

DOI:

10.4028/www.scientific.net/MSF.645-648.343

Citation:

B. Zippelius et al., "Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects", Materials Science Forum, Vols. 645-648, pp. 343-346, 2010

Online since:

April 2010

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$35.00

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