Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects


Article Preview

A large leakage current (IR) is observed at reverse bias (VR) in 3C-SiC p+-n diodes. This leakage current is caused by a high density of stacking faults (SFs). The temperature dependence of IR is studied in the temperature range from 100 K to 295 K. It turns out that IR is thermally activated for reverse voltages VR  |170| V. We propose that within this voltage range IR originates from thermally assisted tunneling of electrons and holes from band-like states of the SFs into the conduction and valence band. For VR > |170| V, the thermal barrier is strongly reduced and direct tunneling dominates. These dependences are simulated in the framework of a simplified model.



Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller




B. Zippelius et al., "Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects", Materials Science Forum, Vols. 645-648, pp. 343-346, 2010

Online since:

April 2010




[1] K. Furukawa, A. Uemoto, M. Shigeta, A. Suzuki, S. Nakajima: Appl. Phys. Lett. Vol. 48 (1986), p.1536.

[2] P. G. Neudeck, D. J. Larkin, J. E. Starr, J. A. Powell: IEEE Transactions Electron. Dev. Vol. 42 (1994), p.826.

[3] J. A. Edmond, K. Das, R. F. Davis: J: Appl. Phys. Vol. 63 (1998), p.922.

[4] H. Nagasawa, M. Abe, K. Yagi, T. Kawahara, N. Hatta: phys. stat. sol. (b) Vol. 245 (2008), p.1272.

[5] T. Figielski: phys. stat. sol. (a) Vol. 121 (1990), p.187.

[6] K. Maeda, K. Suzuki, M. Ichihara: Microsc. Microanal. Microstruct. Vol. 4 (1993), p.211.

[7] H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, M. Abe, Microelectronic Eng. Vol. 83 (2006), p.185.

[8] D. M. Sathaiya, S. Kamalkar: J. Appl. Phys. Vol. 99 (2006), p.093701.

Fetching data from Crossref.
This may take some time to load.