6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers

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A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 4H-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

347-350

Citation:

T. Robert et al., "6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers", Materials Science Forum, Vols. 645-648, pp. 347-350, 2010

Online since:

April 2010

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$38.00

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