A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films

Abstract:

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A wide characterization of crystalline defects involved in the 3C-SiC heteroepitaxy on Si is here presented. The aim of this work is to show how analysis techniques, such as transmission electron microscopy (TEM) and x-ray diffraction (XRD), can help the researcher in the study of structural defects. The work is focused on stacking faults and microtwins since both of them influence the atomic stacking along the {111} 3C-SiC planes. Their distinction can indeed be troublesome. It will be shown that TEM can be helpful, by choosing a determined zone axis of observation, for defect characterization and distinction. Moreover, the impact of microtwins on the crystal quality of 3C-SiC films is studied by performing XRD pole figures. By means of this technique and simulations, we found that the <111> direction of the SiC crystal is not aligned to the <110> Si direction, but it is shifted of 3.5° along the <002> Si direction, due to second-order twinnings in the 3C-SiC crystal.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

371-374

DOI:

10.4028/www.scientific.net/MSF.645-648.371

Citation:

A. Severino et al., "A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films", Materials Science Forum, Vols. 645-648, pp. 371-374, 2010

Online since:

April 2010

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$35.00

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