Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations
This paper describes the characteristics of porous 3C-SiC with in-situ N-doping concentrations. Polycrystalline (poly) 3C-SiC thin films were deposited on p-type Si (100) substrates by APCVD using hexamethyildisilane (HMDS: Si2(CH3)6). The porous 3C-SiC (pSiC) was achieved by anodized with 380 nm UV-LED. The characteristics of the N2 doped pSiC were evaluated using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and photo luminescence (PL). Average pore diameter is about 50 nm and etched area was increased with N2 doping rate. These results are attributed to decrease the crystallinity by N2 doping. The band gaps of poly 3C-SiC films and porous 3C-SiC films were 2.5 eV and 2.7 eV, respectively.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
K. S. Kim and G. S. Chung, "Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations", Materials Science Forum, Vols. 645-648, pp. 391-394, 2010