Theory of Neutral Divacancy in SiC: A Defect for Spintronics

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We investigate the neutral divacancy in SiC by means of first principles calculations and group theory analysis. We identify the nature of the PL transitions associated with this defect. We show that how the spin state may be manipulated optically in this defect.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

395-397

Citation:

A. Gali et al., "Theory of Neutral Divacancy in SiC: A Defect for Spintronics", Materials Science Forum, Vols. 645-648, pp. 395-397, 2010

Online since:

April 2010

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$38.00

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