Theory of Neutral Divacancy in SiC: A Defect for Spintronics
We investigate the neutral divacancy in SiC by means of first principles calculations and group theory analysis. We identify the nature of the PL transitions associated with this defect. We show that how the spin state may be manipulated optically in this defect.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
A. Gali et al., "Theory of Neutral Divacancy in SiC: A Defect for Spintronics", Materials Science Forum, Vols. 645-648, pp. 395-397, 2010