The Carbon Vacancy Related EI4 Defect in 4H-SiC

Abstract:

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Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room temperature. The EPR signal of the EI4 defect was found to be dominating in samples irradiated and annealed at ~750°C. Additional large-splitting 29Si hyperfine (hf) lines and also other 13C and 29Si hf structures were observed. Based on the observed hf structures and annealing behaviour, the complex between a negative carbon vacancy-carbon antisite pair (VCCSi–) and a distance positive carbon vacancy ( ) is tentatively proposed as a possible model for the EI4 defect.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

399-402

DOI:

10.4028/www.scientific.net/MSF.645-648.399

Citation:

N. T. Son et al., "The Carbon Vacancy Related EI4 Defect in 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 399-402, 2010

Online since:

April 2010

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Price:

$35.00

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