The Carbon Vacancy Related EI4 Defect in 4H-SiC
Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room temperature. The EPR signal of the EI4 defect was found to be dominating in samples irradiated and annealed at ~750°C. Additional large-splitting 29Si hyperfine (hf) lines and also other 13C and 29Si hf structures were observed. Based on the observed hf structures and annealing behaviour, the complex between a negative carbon vacancy-carbon antisite pair (VCCSi–) and a distance positive carbon vacancy ( ) is tentatively proposed as a possible model for the EI4 defect.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
N. T. Son et al., "The Carbon Vacancy Related EI4 Defect in 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 399-402, 2010