New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC

Abstract:

Article Preview

In this paper we revisit sharp low temperature luminescence lines (LTPL) previously generated by high dose 1018 to 1020 cm-2 electron beams in an electron microscope and now produced by low dose 1015 cm-2 electron, 5x1010 cm-2 proton and helium ion irradiation. New no phonon lines E0, F0, θ0, Φ0, K0, G0, J0, M0 and phonon replicas are found. Phonon replicas up to the fifth harmonic are well accounted for by theory giving convincing new evidence that the di-carbon antisite is responsible for these deep defect lines.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

411-414

DOI:

10.4028/www.scientific.net/MSF.645-648.411

Citation:

F. Yan et al., "New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC", Materials Science Forum, Vols. 645-648, pp. 411-414, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.