Breakdown of Impurity Al in SiC Polytypes

Abstract:

Article Preview

In this work, we have studied I-V characteristics of Al breakdown in 6H-, 4H- and 15R-SiC in electrical field. As a result there obtained the next original data: 1) decreasing dependence of breakdown field due to the concentration increase in the range of Na – Nd = 5x1017–1019 cm-3; 2) absence of low temperature breakdown when Na - Nd< 1017 cm-3; 3) increasing of breakdown field while temperature declines from 77K to 4.2K; 4) at 300K the breakdown field decreases and the breakdown takes place in samples with the absence of low temperature breakdown; 5) gigantic enhancement of breakdown field at F||C. 6) the theoretical analysis based on the theory of a zero radius potential supports the probability of breakdown field enhancement at F||C.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

451-454

DOI:

10.4028/www.scientific.net/MSF.645-648.451

Citation:

V. I. Sankin et al., "Breakdown of Impurity Al in SiC Polytypes", Materials Science Forum, Vols. 645-648, pp. 451-454, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.