Breakdown of Impurity Al in SiC Polytypes
In this work, we have studied I-V characteristics of Al breakdown in 6H-, 4H- and 15R-SiC in electrical field. As a result there obtained the next original data: 1) decreasing dependence of breakdown field due to the concentration increase in the range of Na – Nd = 5x1017–1019 cm-3; 2) absence of low temperature breakdown when Na - Nd< 1017 cm-3; 3) increasing of breakdown field while temperature declines from 77K to 4.2K; 4) at 300K the breakdown field decreases and the breakdown takes place in samples with the absence of low temperature breakdown; 5) gigantic enhancement of breakdown field at F||C. 6) the theoretical analysis based on the theory of a zero radius potential supports the probability of breakdown field enhancement at F||C.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
V. I. Sankin et al., "Breakdown of Impurity Al in SiC Polytypes", Materials Science Forum, Vols. 645-648, pp. 451-454, 2010