Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films

Abstract:

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We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1 x(AlN)x by rf triple magnetron sputtering. Cathodoluminescence measurements performed at samples having different compositions x show pronounced intra 4f shell transition peaks of the trivalent terbium. Thermal activation of the terbium emission by isochronal annealing of the films leads to a strong increase in emission intensity.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

459-462

DOI:

10.4028/www.scientific.net/MSF.645-648.459

Citation:

O. Erlenbach et al., "Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films", Materials Science Forum, Vols. 645-648, pp. 459-462, 2010

Online since:

April 2010

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$35.00

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