Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films
We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1 x(AlN)x by rf triple magnetron sputtering. Cathodoluminescence measurements performed at samples having different compositions x show pronounced intra 4f shell transition peaks of the trivalent terbium. Thermal activation of the terbium emission by isochronal annealing of the films leads to a strong increase in emission intensity.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
O. Erlenbach et al., "Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films", Materials Science Forum, Vols. 645-648, pp. 459-462, 2010