Overview of 3C-SiC Crystalline Growth

Abstract:

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The objective of this review is to set the present state of the art of 3C-SiC crystalline growth by emphasizing the new and promising trends related to this polytype elaboration. The need of high quality 3C seed is showed to be more important than for other polytypes, in order to avoid β→ transformation during high temperature bulk growth. The effect of various parameters, such as supersaturation, gas phase composition, strain or impurities, is discussed. Recent results obtained using vapour-liquid-solid mechanism and continuous feed vapour phase transport are bringing new insight on 3C-SiC stability and setting new standards of material quality.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

49-54

DOI:

10.4028/www.scientific.net/MSF.645-648.49

Citation:

G. Ferro "Overview of 3C-SiC Crystalline Growth", Materials Science Forum, Vols. 645-648, pp. 49-54, 2010

Online since:

April 2010

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$35.00

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