Growth Rate and Thickness Uniformity of Epitaxial Graphene
The paper provides a deeper understanding of key-parameters of epitaxial graphene growth techniques on SiC. At 16000C, the graphene layer is continuous and covers a large area of the substrate. Significant differences in the growth rate could be observed for different reactor pressures and the polarity of SiC substrates as well as for the substrate miscut and surface quality. In addition, graphene thickness uniformity and mechanism of ridges creation was examined.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
W. Strupiński et al., "Growth Rate and Thickness Uniformity of Epitaxial Graphene", Materials Science Forum, Vols. 645-648, pp. 569-572, 2010