Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation


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By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower temperatures than with conventional Si sublimation. Therefore, the degradation of the initial SiC surface morphology can be avoided. The layers of graphene are characterized by low energy electron diffraction (LEED), angle resolved ultraviolet photoelectron spectroscopy (ARUPS), and atomic force microscopy (AFM). On SiC the graphene lattice is rotated by 30o in comparison to preparation by annealing in UHV alone.



Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller




A. Al-Temimy et al., "Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation ", Materials Science Forum, Vols. 645-648, pp. 593-596, 2010

Online since:

April 2010




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