Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy

Röhrl, Jonas; Hundhausen, Martin; Speck, Florian; Seyller, Thomas

doi:10.4028/www.scientific.net/MSF.645-648.603

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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Strain and Charge in Epitaxial Graphene on Silicon...

Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy

Abstract:

The phonon frequencies of epitaxial graphene on silicon carbide (SiC) depend on mechanical strain and charge transfer from the substrate to the epitaxial layer. Strain and doping depend on the preparation process and on the number of graphene layers. We measured the phonon frequencies by Raman spectroscopy and compare the results between epitaxial layers fabricated by high temperature annealing and by hydrogen intercalation of the covalently bound graphene layer of the 6 p 3 6 p 3 reconstructed SiC surface. Only the latter graphene layer shows tensile strain, which can partly be explained by lattice mismatch between substrate and epitaxial graphene.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

603-606

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.603

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Online since:

April 2010

Authors:

Jonas Röhrl, Martin Hundhausen, Florian Speck, Thomas Seyller

Keywords:

Graphen, Raman Spectroscopy

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