Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates


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We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.



Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller




S. Kamoi et al., "Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 611-614, 2010

Online since:

April 2010




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