Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates

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We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

611-614

DOI:

10.4028/www.scientific.net/MSF.645-648.611

Citation:

S. Kamoi et al., "Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 611-614, 2010

Online since:

April 2010

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$38.00

[1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov: Science Vol. 306(2004), p.666.

[2] A. K. Geim, Science Vol. 324(2009), p.1530.

[3] A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth and A. K. Geim: Phys. Rev. Lett. Vol. 97(2006), p.187401.

DOI: 10.1103/physrevlett.97.187401

[4] J. Röhrl, M. Hundhausen, K. V. Emtsev, Th. Seyler, R. Graupner and L. Ley: Appl. Phys. Lett. Vol. 92(2008), p.201918.

DOI: 10.1063/1.2929746

[5] Z. H. Ni, W. Chen, X. F. Fan, J. L. Kuo, T. Yu, A. T. S. Wee and Z. X. Shen: Phys. Rev. B Vol. 77(2008), p.115416.

[6] D. S. Lee, C. Riedl, B. Kraus, K. von Klitzing, U. Starke and J. H. Smet: Nano Lett. Vol. 8(2008), p.4320.

[7] K. Morita et al., in preparation.

[8] S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors Numerical Data and Graphical Information (Kruwer, USA 1999).

[9] I. Calizo, I. Bejenari, M. Rahman, G. Liu and A. A. Balandin: J. Appl. Phys. Vol. 106(2009), p.043509.

[10] M. Stockmeier, S. A. Saker, P. Hens, P. J. Wellmann, R. Hock and A. Magerl: Materials Science Forum Vols. 600-603 (2009), p.517.

DOI: 10.4028/www.scientific.net/msf.600-603.517

[11] D.K.L. Tsang, B. J. Marsden and A. S. Fok: Carbon Vol. 43 (2005), p.2902.

[12] A. Ferrari and J. Robertson: Phys. Rev. B Vol. 61(2000), 14095.

[13] D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A. Jungen, C. Hierold and L. Wiltz: Nano Lett. Vol. 7 (2007), p.238.

DOI: 10.1021/nl061702a

[14] J. B. Hannon and R. M. Tromp: Phys. Rev. B Vol. 77(2009), p.241405.

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