Quasi-Freestanding Graphene on SiC(0001)

Speck, Florian; Ostler, Markus; Röhrl, Jonas; Jobst, Johannes; Waldmann, Daniel; Hundhausen, Martin; Ley, Lothar; Weber, Heiko B.; Seyller, Thomas

doi:10.4028/www.scientific.net/MSF.645-648.629

Paper Titles

Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates
p.611

Optical Transmission of Epitaxial Graphene Layers on SiC in the Visible Spectral Range
p.615

Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000-1) and 4H-SiC:H Surface
p.619

Hydrogen Intercalation below Epitaxial Graphene on SiC(0001)
p.623

Quasi-Freestanding Graphene on SiC(0001)
p.629

Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
p.633

Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)
p.637

Defect Control in Growth and Processing of 4H-SiC for Power Device Applications
p.645

Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC
p.651

Home Materials Science Forum Silicon Carbide and Related Materials 2009Quasi-Freestanding Graphene on SiC(0001)

Quasi-Freestanding Graphene on SiC(0001)

Abstract:

We report on a comprehensive study of the properties of quasi-freestanding monolayer and bilayer graphene produced by conversion of the (6√3×6√3)R30° reconstruction into graphene via intercalation of hydrogen. The conversion is confirmed by photoelectron spectroscopy and Raman spectroscopy. By using infrared absorption spectroscopy we show that the underlying SiC(0001) surface is terminated by hydrogen in the form of Si-H bonds. Using Hall effect measurements we have determined the carrier concentration and type as well as the mobility which lies well above 1000 cm2/Vs despite a significant amount of short range scatterers detected by Raman spectroscopy.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Main Theme:

Silicon Carbide and Related Materials 2009

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

629-632

DOI:

10.4028/www.scientific.net/MSF.645-648.629

Citation:

F. Speck et al., "Quasi-Freestanding Graphene on SiC(0001)", Materials Science Forum, Vols. 645-648, pp. 629-632, 2010

Online since:

April 2010

Authors:

Florian Speck, Markus Ostler, Jonas Röhrl, Johannes Jobst, Daniel Waldmann, Martin Hundhausen, Lothar Ley, Heiko B. Weber, Thomas Seyller

Keywords:

Graphen, Hall Effect, Infrared Absorption, Raman Spectroscopy

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