Quasi-Freestanding Graphene on SiC(0001)

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We report on a comprehensive study of the properties of quasi-freestanding monolayer and bilayer graphene produced by conversion of the (6√3×6√3)R30° reconstruction into graphene via intercalation of hydrogen. The conversion is confirmed by photoelectron spectroscopy and Raman spectroscopy. By using infrared absorption spectroscopy we show that the underlying SiC(0001) surface is terminated by hydrogen in the form of Si-H bonds. Using Hall effect measurements we have determined the carrier concentration and type as well as the mobility which lies well above 1000 cm2/Vs despite a significant amount of short range scatterers detected by Raman spectroscopy.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

629-632

DOI:

10.4028/www.scientific.net/MSF.645-648.629

Citation:

F. Speck et al., "Quasi-Freestanding Graphene on SiC(0001)", Materials Science Forum, Vols. 645-648, pp. 629-632, 2010

Online since:

April 2010

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$35.00

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