Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

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Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. We will report on the impact that these transfer processes has upon the electrical properties of the transferred EG films.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

633-636

DOI:

10.4028/www.scientific.net/MSF.645-648.633

Citation:

J. D. Caldwell et al., "Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates", Materials Science Forum, Vols. 645-648, pp. 633-636, 2010

Online since:

April 2010

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$35.00

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