Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward Characteristics


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In this work we discuss a structure of a p-doped Poly-Si layer and a Ni layer deposited onto n-type 4H-SiC in order to form a Schottky-like contact which undergoes a specific temperature budget to establish a temperature independent forward characteristic of the formed rectifying junction. The results of our treatment is discussed in terms of a hetero junction, though temperature treated NiSi-layers normally are expected to show an ohmic behavior.



Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller




S. Heim et al., "Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward Characteristics", Materials Science Forum, Vols. 645-648, pp. 665-668, 2010

Online since:

April 2010




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