Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward Characteristics
In this work we discuss a structure of a p-doped Poly-Si layer and a Ni layer deposited onto n-type 4H-SiC in order to form a Schottky-like contact which undergoes a specific temperature budget to establish a temperature independent forward characteristic of the formed rectifying junction. The results of our treatment is discussed in terms of a hetero junction, though temperature treated NiSi-layers normally are expected to show an ohmic behavior.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
S. Heim et al., "Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward Characteristics", Materials Science Forum, Vols. 645-648, pp. 665-668, 2010