Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors

Abstract:

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In this work, the surface, lattice and electrical properties of implanted 4H-SiC, GaN and ZnO, annealed by a novel ultra-fast microwave heating method, are compared to that of conventional annealing methods. In this new method, amplified and variable frequency microwaves from a signal generator are directly coupled to the semiconductor sample through a microwave head. Since, the microwaves are only absorbed by the sample, without heating of the ambient, ultra-high heating (> 2000°C/s) and cooling rates and very high (2100°C) annealing temperatures can be reached. For Al and P species implants into 4H-SiC, record low resistivity values were achieved with a lattice quality better than that of the virgin crystal. This annealing method improved the lattice quality of un-implanted region below the surface implanted region as well. Improved material characteristics were also obtained for GaN and ZnO.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

709-712

DOI:

10.4028/www.scientific.net/MSF.645-648.709

Citation:

M. V. Rao et al., "Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors", Materials Science Forum, Vols. 645-648, pp. 709-712, 2010

Online since:

April 2010

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Price:

$35.00

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