Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors


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In this work, the surface, lattice and electrical properties of implanted 4H-SiC, GaN and ZnO, annealed by a novel ultra-fast microwave heating method, are compared to that of conventional annealing methods. In this new method, amplified and variable frequency microwaves from a signal generator are directly coupled to the semiconductor sample through a microwave head. Since, the microwaves are only absorbed by the sample, without heating of the ambient, ultra-high heating (> 2000°C/s) and cooling rates and very high (2100°C) annealing temperatures can be reached. For Al and P species implants into 4H-SiC, record low resistivity values were achieved with a lattice quality better than that of the virgin crystal. This annealing method improved the lattice quality of un-implanted region below the surface implanted region as well. Improved material characteristics were also obtained for GaN and ZnO.



Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller






M. V. Rao et al., "Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors", Materials Science Forum, Vols. 645-648, pp. 709-712, 2010

Online since:

April 2010




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