Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Abstract:

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This paper reports on the electrical activation and structural analysis of Al implanted 4H-SiC. The evolution of the implant damage during high temperature (1650 – 1700 °C) annealing results in the presence of extended defects and precipitates, whose density and depth distribution in the implanted sheet was accurately studied for two different ion fluences (1.31014 and 1.31015 cm-2) by transmission electron microscopy. Furthermore, the profiles of electrically active Al were determined by scanning capacitance microscopy. Only a limited electrical activation (10%) was measured for both fluences in the samples annealed without a capping layer. The use of a graphite capping layer to protect the surface during annealing showed a beneficial effect, yielding both a reduced surface roughness and an increased electrical activation (20% for the highest fluence and 30% for the lowest one) with respect to samples annealed without the capping layer.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

713-716

DOI:

10.4028/www.scientific.net/MSF.645-648.713

Citation:

M. H. Weng et al., "Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 713-716, 2010

Online since:

April 2010

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$35.00

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