Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

Abstract:

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In this contribution we recapitulate the state of the art of silicon carbide and related materials polishing. Since the demonstration (by Vicente et al) of an ultimate preparation of Si-face -SiC wafers some important progresses were made in the field of surface preparation of silicon carbide and related materials. This concerns the industrial, high output treatments of substrates of increasing size, as well as the research studies of the feasibility of new preparation approaches for wide band gap materials. We also discuss the problems related to the polishing of the polycrystalline material and to the planarization of epilayers.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

753-758

DOI:

10.4028/www.scientific.net/MSF.645-648.753

Citation:

M. Zielinski et al., "Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials", Materials Science Forum, Vols. 645-648, pp. 753-758, 2010

Online since:

April 2010

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Price:

$35.00

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