Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs

Abstract:

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We discuss the influence of negative charging on high-rate ICP etching of SiC via-holes for GaN HEMT MMICs. There is large differential etching behavior such as etch rate, etching profile, and RIE lag between S.I.- and n-SiC substrates because of the difference in wafer heating and negative charging of the sidewall during etching between both substrates. We analyze the difference in negative charging between both substrates by simulating the etching profile.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

791-794

DOI:

10.4028/www.scientific.net/MSF.645-648.791

Citation:

N. Okamoto et al., "Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs", Materials Science Forum, Vols. 645-648, pp. 791-794, 2010

Online since:

April 2010

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