Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride
We have developed a novel planarization technique for gallium nitride (GaN) substrates using a photo-electro chemical process and solid acid catalyst. In this method, a GaN surface is oxidized by ultraviolet (UV) light irradiation, and the oxide layer is chemically removed by a solid acid catalyst. In the current work, the dependence of the removal rate on the UV light intensity was investigated.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
S. Sadakuni et al., "Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride", Materials Science Forum, Vols. 645-648, pp. 795-798, 2010