Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride

Abstract:

Article Preview

We have developed a novel planarization technique for gallium nitride (GaN) substrates using a photo-electro chemical process and solid acid catalyst. In this method, a GaN surface is oxidized by ultraviolet (UV) light irradiation, and the oxide layer is chemically removed by a solid acid catalyst. In the current work, the dependence of the removal rate on the UV light intensity was investigated.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

795-798

DOI:

10.4028/www.scientific.net/MSF.645-648.795

Citation:

S. Sadakuni et al., "Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride", Materials Science Forum, Vols. 645-648, pp. 795-798, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.