Effects of Post-Deposition Annealing on CeO2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC

Abstract:

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Electrical properties of MOD-derived CeO2 film deposited on n-type 4H-SiC have been investigated. Post-deposition annealing of the oxide was performed in argon ambient for 15 minutes at 600, 800, and 1000°C in order to optimize the oxide properties. Spin-on coating was then used to deposit the annealed oxide onto the substrate. Results indicated that the effective oxide charge and slow trap density increased as temperature increased. Negative effective oxide charges were revealed in all annealed oxides. The lowest leakage current and interface trap density was obtained in the sample annealed in the highest temperature.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

837-840

DOI:

10.4028/www.scientific.net/MSF.645-648.837

Citation:

W. F. Lim et al., "Effects of Post-Deposition Annealing on CeO2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 837-840, 2010

Online since:

April 2010

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$35.00

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