Nanostructuring Techniques for 3C-SiC(100) NEMS Structures

Abstract:

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In this work nanostructures based on a 30 nm thick 3C-SiC (100) heteroepitaxially grown on Si(100) are demonstrated. They consist of free standing nanoresonators with dimensions below 50 nm. The free standing nanostructures and resonators were defined by electron beam lithography using hydrogen silsesquioxane (HSQ) as a negative tone e-beam resist acting as a selective etching mask during the anisotropic and isotropic dry etching. The influences of the proximity effect, the crystallographic orientation, the angle of exposing on the feature size are highlighted.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

841-844

DOI:

10.4028/www.scientific.net/MSF.645-648.841

Citation:

M. Hofer et al., "Nanostructuring Techniques for 3C-SiC(100) NEMS Structures", Materials Science Forum, Vols. 645-648, pp. 841-844, 2010

Online since:

April 2010

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Price:

$35.00

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