Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers

Abstract:

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The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on either bulk material or on the SiC surface. The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication. In this work a comparison between single crystal and poly crystal 3C-SiC micro-machined structures will be presented. The free-standing structures realized (cantilevers and membrane) are also a suitable method for residual field stress investigation in 3C-SiC films. Measurement of the Raman shift indicates that the mono and poly-crystal 3C-SiC structures release the stress in different ways. Finite element analysis was performed to determine the stress field inside the films and provided a good fit to the experimental data. A comprehensive experimental and theoretical study of 3C-SiC MEMS structures has been performed and is presented.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

865-868

DOI:

10.4028/www.scientific.net/MSF.645-648.865

Citation:

R. Anzalone et al., "Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers", Materials Science Forum, Vols. 645-648, pp. 865-868, 2010

Online since:

April 2010

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Price:

$35.00

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