Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature

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SiC schottky diodes take advantage of the material's superior reverse breakdown voltage when compared to Silicon (Si) [1]. However, when considered for MOSFET applications, the high concentration of interface traps at the SiC/SiO2 interface reduce the material's already low channel mobility [2]. Therefore, a Ge/SiC heterojunction solution becomes an attractive prospect, whereby the Ge forms the control region after being epitaxially grown on the SiC. With a well established Ge-High K dielectric technology [3], a carbon-free oxide would exist, leaving a channel-region with a mobility approximately four times that of SiC.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

889-892

DOI:

10.4028/www.scientific.net/MSF.645-648.889

Citation:

P. M. Gammon et al., "Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature", Materials Science Forum, Vols. 645-648, pp. 889-892, 2010

Online since:

April 2010

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$35.00

[1] P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, G. J. Roberts, M. C. Davis, V. A. Shah, S. E. Burrows, N. R. Wilson, J. A. Covington, and P. A. Mawby: Appl. Phys. Lett. Vol. 93 (2008), 112104.

DOI: 10.1063/1.2987421

[2] A. Pérez-Tomás, M. R. Jennings, M. Davis, J. A. Covington, P. A. Mawby, V. Shah and T. Grasby: J. Appl. Phys. Vol. 102 (2007), 014505.

[3] R. J. H. Morris, D. R. Leadley, R. Hammond, T. J. Grasby, T. E. Whall, and E. H. C. Parker: J. Appl. Phys. Vol. 96 (2004), 116470.

[4] K. N. Tu, J. W. Mayer and L. C. Feldman: Electronic Thin Film Science, Maxwell Macmillan International (1992).

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