Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
SiC schottky diodes take advantage of the material's superior reverse breakdown voltage when compared to Silicon (Si) . However, when considered for MOSFET applications, the high concentration of interface traps at the SiC/SiO2 interface reduce the material's already low channel mobility . Therefore, a Ge/SiC heterojunction solution becomes an attractive prospect, whereby the Ge forms the control region after being epitaxially grown on the SiC. With a well established Ge-High K dielectric technology , a carbon-free oxide would exist, leaving a channel-region with a mobility approximately four times that of SiC.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
P. M. Gammon et al., "Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature", Materials Science Forum, Vols. 645-648, pp. 889-892, 2010