Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance

Abstract:

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In this work we discuss measurements of the breakdown voltage of diodes with non-punch-through (NPT)- and punch-through (PT)-designs. From the experimental results we deduce the temperature dependent Fulop constants of the effective ionization rate. The data of this work agree very well with ionization rates for electrons and holes determined recently.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

909-912

DOI:

10.4028/www.scientific.net/MSF.645-648.909

Citation:

W. Bartsch et al., "Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance ", Materials Science Forum, Vols. 645-648, pp. 909-912, 2010

Online since:

April 2010

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$35.00

[1] A.S. Kyuregyan, S.N. Yurkov: Sov. Phys. Semicond. Vol. 23, No. 10 (1989) p.1126.

[2] J.W. Palmour, C.H. Carter, C.E. Weitzel, K.J. Nordquist : Proc. Mat. Res. Symp. Vol. 339 (1994) p.133.

[3] A.O. Konstantinov, Q. Wahab, N. Nordell, U. Lindefeldt : APL Vol. 71, No. 1 (1997) p.90 & A.O. Konstantinov, N. Nordell, Q. Wahab, U. Lindefeldt: APL Vol. 73, No. 13 (1998) p.1850.

[4] R. Raghunathan, B.J. Baliga: Solid-State Electr. Vol. 43 (1999) p.199.

[5] D. Peters, P. Friedrichs, H. Mitlehner, R. Schörner, U. Weinert, B. Weis, D. Stephani: ISPSD 2000, Toulouse, ISBN 0-7803-6269-1, (2000) p.241.

[6] A.R. Hefner, R. Singh, J. -S. Lai, D.W. Berning, S. Bouche, C. Chapuy: IEEE Trans. on Pow. Electr. Vol. 16, No. 2 (2001) p.273.

[7] J.A. Cooper, A. Agarwal: Proc. of the IEEE Vol. 90, No. 6 (2002) p.956.

[8] R. Singh, J.A. Cooper, M.R. Melloch, T.P. Chow, J.W. Palmour: IEEE Trans. on Electron. Dev. Vol. 49, No. 4 (2002) p.665.

[9] A. Elasser, M.H. Kheraluwala, M. Ghezzo, R.I. Steigerwald, N.A. Evers, J. Kretchmer, T.P. Chow: IEEE Trans. on Ind. Appl. Vol. 39, No. 4 (2003) p.915.

DOI: 10.1109/tia.2003.813730

[10] T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai, N. Sano: Appl. Phys. Lett. Vol. 85, No. 8 (2004) p.1380.

[11] W. Bartsch, B. Thomas, H. Mitlehner, B. Blöcher, S. Gediga: EPE 2007, Aalborg, DK, paper #0636; ISBN 9789075815108, (2007), p.1.

[12] J. Shields: J. Electron. Control. No. 6 (1959) p.130.

[13] W. Fulop: Solid-State Electronics Vol. 10, No. 1 (1967) p.39.

[14] R. Singh & B.J. Baliga: Solid-State Electronics Vol. 36, No. 8 (1993) p.1203.

[15] W.S. Loh, B.K. Ng, J.S. Ng, S.I. Soloviev, H.Y. Cha, P.M. Sandvik, C.M. Johnson, J.P.R. David: IEEE Trans. on Electron. Dev. Vol. 55, No. 8 (2008) p. (1984).

[16] B.M. Wul & A.P. Shotov: Solid State Physics in Electron. Telecommun. Vol. 1 (1960) p.491.

[17] T. Ogawa: Jap. J. of Appl. Phys. Vol. 4 (1965) p.473.

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