Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation


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The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated with electrons of energies from 100 keV to 1 MeV. The charge collection efficiencies of the samples were measured for alpha particles before and after the electron irradiation. The electron irradiation at 100 keV does not affect the charge collection efficiency, while the electron irradiation at 200 keV or higher decreases the charge collection efficiency. The degree of the degradation of the diodes correlates with the energy of the electron irradiation.



Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller




N. Iwamoto et al., "Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation ", Materials Science Forum, Vols. 645-648, pp. 921-924, 2010

Online since:

April 2010




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