Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics

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We investigated the impact of a combination treatment of nitrogen plasma exposure and forming gas annealing (FGA) for a thermally grown SiO2 layer on channel electron mobility in 4H-SiC metal-insulator-semiconductor field-effect-transistors (MISFETs) with and without deposited aluminum oxynitride (AlON) overlayers. This treatment was effective for improving the interface properties of nitrided SiO2/SiC structures formed by thermal oxidation in NOx ambient as well as pure SiO2/SiC structures. A channel mobility enhancement was perfectly consistent with a reduction in interface state density depending on the process conditions of the combination treatment, and a peak mobility of 26.9 cm2/Vs was achieved for the MISFETs with the nitrided SiO2 single dielectric layer. Comparable channel mobility was obtained with a gate insulator consisting of the AlON stacked on a thin nitrided SiO2 interlayer, indicating that both the combination treatment and the AlON/SiO2 stacked dielectrics can be integrated into the SiC MISFET fabrication processes.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

991-994

DOI:

10.4028/www.scientific.net/MSF.645-648.991

Citation:

T. Hosoi et al., "Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics ", Materials Science Forum, Vols. 645-648, pp. 991-994, 2010

Online since:

April 2010

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$35.00

[1] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman and R.A. Weller: Appl. Phys. Lett. Vol. 90 (2000), p.1713.

[2] P. Jamet and S. Dimitrijev: Appl. Phys. Lett. Vol. 79 (2001), p.323.

[3] Y. Maeyama, H. Yano, Y. Furumoto, Y. Uraoka, and T. Fuyuki: Jpn. J. Appl. Phys. Vol. 42 (2003), p.575.

[4] H. Watanabe, Y. Watanabe, M. Harada, Y. Kagei, T. Kirino, T. Hosoi, T. Shimura, S. Mitani, Y. Nakano and T. Nakamura: Mater. Sci. Forum Vol. 615-617 (2009), p.525.

DOI: 10.4028/www.scientific.net/msf.615-617.525

[5] K. Fukuda, S. Suzuki, T. Tanaka and K. Arai: Appl. Phys. Lett. Vol. 76 (2000), p.1585.

[6] A. K. Agarwal, S. Seshadri and L. B. Rowland: IEEE Electron Device Lett. Vol. 18 (1997), p.592.

[7] T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura and H. Watanabe: Mater. Sci. Forum Vol. 615-617 (2009), p.541.

DOI: 10.4028/www.scientific.net/msf.615-617.541

[8] J. H. Stathis: J. Appl. Phys. Vol. 77 (1995), p.6205.

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