Silicon Carbide and Related Materials 2009
Paper Title Page
Abstract: One of the most crucial defects for the device fabrication on silicon carbide (SiC) substrates are areas with low crystalline quality and...
Abstract: In-grown type stacking faults (SFs) like structures were observed in 100mm diameter 4H-SiC crystals by Photoluminescence (PL) mappings, and...
Abstract: High-speed solution growth using Si-Cr based melt has been performed on on-axis 4H-SiC(0001) at a high temperature of about 2000°C. The...
Abstract: In this work we present the growth of 4H-SiC crystals (2 inch in diameter) on the 8° off- axis C-face 6H-SiC seeds, inclined toward [11-20]...
Abstract: Results of vanadium doping in PVT SiC bulk growth by the use of the seeding technique with an open seed backside are shown. Structural and...
Abstract: In this paper, we report on the current status of our technology for the commercial production of 3” 6H-SiC substrates, including PVT growth...
Abstract: We have investigated thermally induced strain in the SiC crystal lattice during physical vapor transport bulk growth. Using high energy...