Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors

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Periodical:

Materials Science Forum (Volumes 65-66)

Edited by:

Gordon Davies

Pages:

1-10

DOI:

10.4028/www.scientific.net/MSF.65-66.1

Citation:

J. Wagner "Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors", Materials Science Forum, Vols. 65-66, pp. 1-10, 1991

Online since:

January 1991

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