Paper Titles

Optical Absorption Spectra Associated to Shallow Impurities in GaAs-(Ga,Al)As Quantum Well Wires
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Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors
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Sulfur-Hydrogen Donor Complexes in Silicon
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Photothermal Ionization Studies of Effective Mass-Like Hydrogen-Related Donors in Silicon
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Valence Force Models as a Test of Atomic Models
p.163

Hydrogen-Impurity Complexes in GaAs
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An Investigation of the 78/203 meV Double Acceptor in GaAs Including the Effects of Hydrogen Passivation
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Diffusion of Deuterium in ZnHgTe and CdHgTe as a Function of Composition
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Ultra-High Resolution Photoluminescence Studies of Bound Excitons and Multi-Bound Exciton Complexes in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 65-66Valence Force Models as a Test of Atomic Models

Valence Force Models as a Test of Atomic Models

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Shallow Impurities in Semiconductors IV

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

163-168

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.163

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Online since:

January 1991

Authors:

Vitor Torres, Gordon Davies, A.M. Stoneham

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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