Paper Titles
Valence Force Models as a Test of Atomic Models
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Hydrogen-Impurity Complexes in GaAs
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An Investigation of the 78/203 meV Double Acceptor in GaAs Including the Effects of Hydrogen Passivation
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Diffusion of Deuterium in ZnHgTe and CdHgTe as a Function of Composition
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Ultra-High Resolution Photoluminescence Studies of Bound Excitons and Multi-Bound Exciton Complexes in Silicon
p.187
Host-Lattice Isotope Dependence of Acceptor Bound-Exciton Luminescence in Diamond
p.199
Fine Structure of Bound Exciton Luminescence in Uniaxially Stressed Si:B
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New Features in the Photoluminescence Spectra of Bound Multiexciton Complexes in Uniaxially Stressed Boron Doped Silicon
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Ultra-High Resolution Photoluminescence Studies of Bound Excitons and Multi-Bound Exciton Complexes in Silicon

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

187-198

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.187

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Online since:

January 1991

Authors:

M.L.W. Thewalt, D.M. Brake

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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