Paper Titles

Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors
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Determination of Residual Donor Concentration by Selective Pair Luminescence in Semi-Insulating GaAs
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Dynamics of Selectively Excited Donor Acceptor Pairs in GaAs
p.21

A New Technology of Boron Diffusion into Silicon by Rapid Thermal Processing
p.29

Control of Shallow Boron Profile in Silicon
p.35

Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio
p.41

Electron-Hole Mechanism of Migration and Defect Interaction
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Delta-Doping in III-V Semiconductors
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HomeMaterials Science ForumMaterials Science Forum Vols. 65-66Dynamics of Selectively Excited Donor Acceptor...

Dynamics of Selectively Excited Donor Acceptor Pairs in GaAs

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Shallow Impurities in Semiconductors IV

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

21-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.21

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Online since:

January 1991

Authors:

T.D. Harris, J.K. Trautman, J.I. Colonell

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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