Paper Titles
Host-Lattice Isotope Dependence of Acceptor Bound-Exciton Luminescence in Diamond
p.199
Fine Structure of Bound Exciton Luminescence in Uniaxially Stressed Si:B
p.205
New Features in the Photoluminescence Spectra of Bound Multiexciton Complexes in Uniaxially Stressed Boron Doped Silicon
p.211
Photoluminescence Excitation Spectroscopy of Donors in Ge
p.217
Lattice Distortions and Exciton Bound to Nitrogen in GaP-Rich A3B5 Alloys
p.223
Binding of Excitons around Hg Atoms in ZnxHg1-x Te and CdxHg1-xTe Alloys
p.229
Shallow Acceptor Bound-Excitons in CdTe Epitaxial Layers on (100) GaAs
p.235
Magneto-Transport in Stressed Si:B in the Localization Regime
p.241
Aluminum Related Thermally Induced Defects in Silicon
p.247

Lattice Distortions and Exciton Bound to Nitrogen in GaP-Rich A3B5 Alloys

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Periodical:

Materials Science Forum (Volumes 65-66)

Pages:

223-228

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66.223

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Online since:

January 1991

Authors:

I.I. Parfenova, M.V. Lupal

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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