Relaxation of Extrinsic Excitation in Si Doped with III and V Group Impurities

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Periodical:

Materials Science Forum (Volumes 65-66)

Edited by:

Gordon Davies

Pages:

271-280

DOI:

10.4028/www.scientific.net/MSF.65-66.271

Citation:

Y.E. Pokrovskii and O.I. Smirnova, "Relaxation of Extrinsic Excitation in Si Doped with III and V Group Impurities", Materials Science Forum, Vols. 65-66, pp. 271-280, 1991

Online since:

January 1991

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